PART |
Description |
Maker |
AEPDS4M8LB-80 AEPDH4M8LB-80 AEPDS4M8LB-80S AEPDS4M |
x8 Nibble Mode DRAM Module x8半字节模式记忆体模组 x8 Page Mode DRAM Module x8页面模式内存模块 x8 Static Column Mode DRAM Module x8静态列模式DRAM模块 x8 DRAM ModuleUndefined Architecture x8内存,未定义建筑
|
Analog Devices, Inc. TOKO, Inc. Altera, Corp.
|
V53C102AK70 V53C102AK70L V53C102AK10 V53C102AK10L |
x1 Static Column Mode DRAM x1静态列模式DRAM
|
ON Semiconductor
|
KM41C466J-10 KM41C466J-7 KM41C466J-8 |
64K X 4 STATIC COLUMN DRAM, 100 ns, PQCC18 64K X 4 STATIC COLUMN DRAM, 70 ns, PQCC18 64K X 4 STATIC COLUMN DRAM, 80 ns, PQCC18
|
|
M5M44258BL-8 M5M44258BJ-10 |
256K X 4 STATIC COLUMN DRAM, 100 ns, PDSO20
|
|
MCM514258J10 |
256K X 4 STATIC COLUMN DRAM, 100 ns, PDSO20
|
MOTOROLA INC
|
PCS2I2310ANZ PCS2I2310ANZG-28-AR PCS2I2310ANZG-28- |
3.3V SDRAM Buffer for Mobile PCS with 4 SO-DIMMsQ STATIC COLUMN DRAM, PDSO28 209 INCH, GREEN, SSOP-28
|
PulseCore Semiconductor Infineon Technologies AG
|
UPD424440LE-70 UPD424440LE-60 UPD424440LE-80 UPD42 |
MoBL® 8-Mbit (1024K x 8) Static RAM MoBL® 8-Mbit (512K x 16) Static RAM CY62167DV30 MoBL® - 16-Mbit (1M x 16) Static RAM x4 Fast Page Mode DRAM x4快速页面模式的DRAM
|
Vishay Intertechnology, Inc.
|
UPD4264405G5-A50-7JD UPD4265405G5-A50-7JD UPD42S65 |
2-Mbit (128K x 18) Flow-Through SRAM with NoBL Architecture x4 EDO Page Mode DRAM 512K (32K x 16) Static RAM 36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 128K x 8 Static RAM 128K的8静态RAM
|
Omron Electronics, LLC
|
AM9016EZL AM9016DDL AM9016CZL |
16K X 1 PAGE MODE DRAM, 200 ns, CQCC18 16K X 1 PAGE MODE DRAM, 250 ns, CDIP16 16K X 1 PAGE MODE DRAM, 300 ns, CQCC18
|
ADVANCED MICRO DEVICES INC
|
MT4C4001JC-12IT MT4C4001JC-10883C MT4C4001JC-7883C |
1 meg x 4 DRAM fast page mode DRAM
|
Austin Semiconductor
|